FERMI LEVEL STABILIZATION AND SURFACE STATES AT INTERFACES OF SI(111) SURFACES AND INSULATING LAYERS

被引：16

作者：

YAMAGISHI, H

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1968年 / 25卷 / 03期

关键词：

D O I：

10.1143/JPSJ.25.766

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：766 / +

页数：1

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[24] TEMPERATURE DEPENDENCE OF SURFACE POTENTIAL OF SI(111) SURFACES WITH A SILICON-NITRIDE LAYER
YAMAGISHI, H
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