SILICON L2,3 CORE ABSORPTION OBTAINED AT THE BURIED AL/SI(111) INTERFACE

被引：12

作者：

BATSON, PE

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.44.5556

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon L2,3 absorption spectra are obtained by spatially resolved electron-energy-loss spectroscopy as a function of distance away from the buried Al/Si(111) interface. Within 0.6 nm, scattering below the bulk absorption threshold is observed, accompanied by changes in shape above the threshold. In silicon, where the core hole is well screened, these variations signify changes in the local density of states above and below the conduction-band edge on a scale of about 0.3 eV. The results are discussed within the framework of the metal-induced-gap-states model.

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页码：5556 / 5561

页数：6

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