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THE ELECTRONIC-STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS-SILICON

被引：11
作者：
DIVINCENZO, DP
BERNHOLC, J
BRODSKY, MH
机构：
[1] EXXON RES & ENGN CO,LINDEN,NJ 07036
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词：
D O I：
10.1051/jphyscol:1981426
中图分类号：
学科分类号：
摘要：
引用
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页码：137 / 140
页数：4
相关论文
共 6 条
[1]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[2]   QUANTUM WELL MODEL OF HYDROGENATED AMORPHOUS-SILICON [J].
BRODSKY, MH .
SOLID STATE COMMUNICATIONS, 1980, 36 (01) :55-59
[3]  
DIVINCENZO DP, 1981, TETRAHEDRALLY BONDED, V73, P156
[4]  
Mott N.F., 1979, ELECTRONIC PROCESSES
[5]  
YONEZAWA F, 1981, FUNDAMENTAL PHYSICS, P119
[6]  
Ziman J M, 1979, MODELS DISORDER
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