PROXIMITY GETTERING WITH MEGA-ELECTRON-VOLT CARBON AND OXYGEN IMPLANTATIONS

被引：145

作者：

WONG, H

CHEUNG, NW

CHU, PK

LIU, J

MAYER, JW

机构：

[1] CORNELL UNIV,NATL RES & RESOURCES FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

[3] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1023 / 1025

页数：3

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[5] MICRODEFECTS IN SILICON AND THEIR RELATION TO POINT-DEFECTS [J].

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[6]

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[7]

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[8]

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[9]

HUFF HR, 1985, SOLID STATE TECHNOL, V28, P103

[10]

JONES KS, 1987, THESIS U CALIFORNIA

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