GETTERING OF GOLD AND COPPER WITH IMPLANTED CARBON IN SILICON

被引:76
作者
WONG, H
CHEUNG, NW
CHU, PK
机构
[1] CORNELL UNIV,NATL RES & RESOURCES FACIL SUBMICRON STRUCT,ITHACA,NY 14853
[2] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063
关键词
D O I
10.1063/1.99263
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:889 / 891
页数:3
相关论文
共 22 条
[1]  
BUCK TM, 1972, APPL PHYS LETT, V21, P486
[2]  
CRAVEN RA, 1986, P MATER RES SOC, V59, P359
[3]  
FENG SQ, 1986, P MATER RES SOC, V59, P439
[4]   METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].
GOETZBERGER, A ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824
[5]  
GOSELE U, 1986, P MATER RES SOC, V59, P419
[6]  
HILL MJ, 1977, SEMICONDUCTOR SILICO, P715
[7]  
HUFF HR, 1985, SOLID STATE TECHNOL, V28, P103
[8]  
JONES KS, 1987, THESIS U CALIFORNIA
[9]   HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS [J].
KISHINO, S ;
KANAMORI, M ;
YOSHIHIRO, N ;
TAJIMA, M ;
IIZUKA, T .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8240-8243
[10]   GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS [J].
LECROSNIER, D ;
PAUGAM, J ;
PELOUS, G ;
RICHOU, F ;
SALVI, M .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5090-5097