ENHANCED CAPACITY CCD

被引:3
作者
CHATTERJEE, PK
TASCH, AF
FU, HS
HOLLOWAY, TC
机构
关键词
D O I
10.1109/T-ED.1978.19358
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1374 / 1382
页数:9
相关论文
共 7 条
[1]  
CHATTERJEE PK, 1977, JUN DEV RES C ITH
[2]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P122
[3]   CHARGE CAPACITY ANALYSIS OF CHARGE-COUPLED RAM CELL [J].
TASCH, AF ;
FU, HS ;
HOLLOWAY, TC ;
FRYE, RC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) :575-585
[4]   HI-C RAM CELL CONCEPT [J].
TASCH, AF ;
CHATTERJEE, PK ;
FU, HS ;
HOLLOWAY, TC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) :33-41
[5]  
TASCH AF, Patent No. 4035906
[6]  
TASCH AF, Patent No. 4027382
[7]   MEASUREMENT OF CHANNEL POTENTIAL IN CHARGE-COUPLED-DEVICE STRUCTURES [J].
TAYLOR, GW ;
TASCH, AF .
SOLID-STATE ELECTRONICS, 1977, 20 (05) :473-474