GRAVIMETRIC ANALYSIS OF PORE NUCLEATION AND PROPAGATION IN ANODIZED SILICON

被引:63
作者
BRUMHEAD, D
CANHAM, LT
SEEKINGS, DM
TUFTON, PJ
机构
[1] Defence Research Agency, Malvern, Great Malvern, WR14 3PS, St Andrew's Road
关键词
SEMICONDUCTORS; SILICON; ANODIZATION;
D O I
10.1016/0013-4686(93)85128-L
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Weighing is one of the simplest methods of characterising porous silicon layers formed on anodised wafers. Extensive gravimetric data are presented on both microporous and mesoporous layers etched in p+, p- and n+ wafers using aqueous and ethanoic HF solutions. Further information has been extracted from these measurements so as to understand better the way in which the pores develop and grow.
引用
收藏
页码:191 / 197
页数:7
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