SIMPLE MODEL FOR SLOPE CHANGE OF C-V CURVES OF IRRADIATED MOS CAPACITORS

被引:1
作者
GALLOWAY, KF [1 ]
机构
[1] USN,AMMUNITION DEPOT,CRANE,IN 47522
关键词
D O I
10.1063/1.1663352
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:964 / 965
页数:2
相关论文
共 8 条
[1]  
DENNEHY WJ, 1967, IEEE T NUCL SCI, VNS14, P276
[2]  
GWYN CW, 1973, SLA730013 SAND LAB D
[3]  
HUGHES HL, 1972, IEEE T NUCL SCI, VNS19, P256
[4]  
MCMILLAN L, 1972, SOLID STATE TECHNOL, V15, P47
[5]  
SZE SM, 1969, PHYSICS SEMICONDUCTO
[6]   IMAGE FORCES AND BEHAVIOR OF MOBILE POSITIVE-IONS IN SILICON DIOXIDE [J].
WILLIAMS, R ;
WOODS, MH .
APPLIED PHYSICS LETTERS, 1973, 22 (09) :458-459
[7]  
ZAININGER KH, 1969, IEEE T EEC DEV, VED16, P333
[8]  
ZAININGER KH, 1966, IEEE T NUCL SCI, VNS13, P237