IMAGE FORCES AND BEHAVIOR OF MOBILE POSITIVE-IONS IN SILICON DIOXIDE

[1] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 601 - &

[2] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[3] HARNWELL GP, 1938, PRINCIPLES ELECTRICI

[4] SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 291 - +

[5] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[6] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 749 - +

[7] NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2 [J]. APPLIED PHYSICS LETTERS, 1972, 20 (11) : 449 - &

[8] IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 966 - +

[9] MOTT NF, 1958, THEORY PROPERTIES ME, P87

[10] MOTT NF, 1950, ELECTRONIC PROCESSIN, P170

[1] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 601 - &

[2] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[3] HARNWELL GP, 1938, PRINCIPLES ELECTRICI

[4] SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 291 - +

[5] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[6] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 749 - +

[7] NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2 [J]. APPLIED PHYSICS LETTERS, 1972, 20 (11) : 449 - &

[8] IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 966 - +

[9] MOTT NF, 1958, THEORY PROPERTIES ME, P87

[10] MOTT NF, 1950, ELECTRONIC PROCESSIN, P170