SIMPLIFIED ASSESSMENT OF PARALLEL CONDUCTION IN MODULATION-DOPED HETEROSTRUCTURES

被引：6

作者：

HARRIS, JJ ^{[1
]}

机构：

[1] PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 1991年 / 2卷 / 12期

关键词：

D O I：

10.1088/0957-0233/2/12/016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A technique for improving the accuracy of Hall-effect measurements on (Al,Ga)As/GaAs and pseudomorphic (Al,Ga)As/(In,Ga)As/GaAs HEMT layers and related structures in the presence of parallel conduction is proposed. It is based on an approximation to the standard 'two-band' model of parallel conduction, and allows an estimate of the degree of parasitic conduction present in the structure to be made simply by performing one additional measurement, namely that of the resistivity of the sample at the same magnetic field as is used for the Hall measurement. Correction factors can then be applied to the measured carrier density and mobility to give significantly improved values for these parameters in the two-dimensional electron gas region of the sample. Application of this technique to two typical experimental situations is then described.

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页码：1201 / 1205

页数：5

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