HOT-ELECTRON MULTIQUANTUM-WELL MICROWAVE DETECTOR OPERATING AT ROOM-TEMPERATURE

被引:11
作者
BARBIERI, S
MANGO, F
BELTRAM, F
LAZZARINO, M
SORBA, L
机构
[1] IST NAZL FIS MAT,TECNOL AVANZATE SUPERF & CATAL LAB,I-34012 TRIESTE,ITALY
[2] CNR,IST ICMAT,I-00016 MONTEROTONDO,ITALY
关键词
D O I
10.1063/1.114683
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new multiquantum well hot-electron microwave detector is demonstrated. The GaAs-AlGaAs heterostructure was grown by molecular beam epitaxy and tested in the X and K bands. It showed room-temperature operation with responsivity of several 103 V/W. The operation of the device is based on enhanced thermionic current due to carrier heating by the incident in-plane polarized microwave electric field. This principle yields a broad frequency range of operation extending up to the millimeter band without significant degradation of the responsivity.© 1995 American Institute of Physics.
引用
收藏
页码:250 / 252
页数:3
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