ACCURATE GENERATION RATE PROFILES IN A-SI-H SOLAR-CELLS WITH TEXTURED TCO SUBSTRATES

被引：34

作者：

TAO, G

ZEMAN, M

METSELAAR, JW

机构：

[1] Dept. of Electrical Engineering, Delft University of Technology, 2600 GA Delft

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90060-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

With a computer program (GENPRO2D) based on incoherent multi-interface scattering, we are able to calculate the carrier generation profile (light absorption profile) in an a-Si:H solar cell with several rough interfaces, provided that the light scattering at every interface is known and the spatial distribution of the incoming light flux is known. In this paper, we show for the first time the absorption profile in a-Si:H solar cells grown on rough TCO.

引用

页码：359 / 366

页数：8

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