RADIO-FREQUENCY SPUTTER DEPOSITION OF BORON-NITRIDE BASED THIN-FILMS

被引：40

作者：

MITTERER, C

RODHAMMER, P

STORI, H

JEGLITSCH, F

机构：

[1] MET WERK PLANSEE GMBH,A-6600 REUTTE,AUSTRIA

[2] VIENNA TECH UNIV,INST ALLGEMEINE PHYS,A-1040 VIENNA,AUSTRIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575767

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2646 / 2651

页数：6

共 24 条

[1]

BEALE HA, 1983, Patent No. 4415420

[2]

BEALE HA, 1979, IND RES DEV JUN, P143

[3]

BEALE HA, 1983, Patent No. 4412899

[4] SYNTHESIS OF CUBIC BORON-NITRIDE FILMS BY ACTIVATED REACTIVE EVAPORATION OF H3BO3 [J].

CHOPRA, KL ;

AGARWAL, V ;

VANKAR, VD ;

DESHPANDEY, CV ;

BUNSHAH, RF .

THIN SOLID FILMS, 1985, 126 (3-4) :307-312

[5]

DANIEL P, 1982, ULTRAHARD MATERIALS, V1

[6]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[7]

DOI Y, 1982, Patent No. 5980775

[8] REACTIVE AND NONREACTIVE HIGH-RATE SPUTTER DEPOSITION OF TUNGSTEN CARBIDE [J].

FUCHS, K ;

RODHAMMER, P ;

BERTEL, E ;

NETZER, FP ;

GORNIK, E .

THIN SOLID FILMS, 1987, 151 (03) :383-395

[9]

Holleck H, 1984, BINARE TERNARE CARBI

[10]

LAIMER S, 1983, MIKROCHIM ACTA S, V10, P177

← 1 2 3 →