ELECTRICAL PROFILING OF SI(001) P-N-JUNCTIONS BY SCANNING TUNNELING MICROSCOPY

被引：43

作者：

YU, ET

JOHNSON, MB

HALBOUT, JM

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.108218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Potential distributions across Si(001)p-n junctions have been studied using cross-sectional scanning tunneling microscopy, spectroscopy, and potentiometry. A clear transition between p-and n-type material can be seen across each junction, and variations in the energy of the conduction-band edge can be detected with a spatial resolution of better than 100-angstrom. Current-voltage characteristics have been measured in both unbiased and electrically biased structures, and measurements under both conditions are consistent with calculated potential distributions.

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页码：201 / 203

页数：3

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