FABRICATION OF THIN-FILM P-CDS(CU)/N-CDSE HETEROJUNCTIONS AND THEIR PHOTOVOLTAIC CHARACTERISTICS

Thin-film p-CdS(Cu)/n-CdSe heterojunction cells were fabricated by all-vacuum-deposition methods. The cells showed rectifying characteristics and photovoltaic effects. There is a remarkable increase of the relative response of the short-circuit current in the spectral region between 510 and 730 nm, which corresponds to the region between the fundamental absorption edges of CdS and CdSe. It was also found that with increasing concentration of copper in the CdS(Cu) layer, the sensitivity of the response increases in the longer-wavelength side. No evidence of the presence of p-type Cu2S was detected in the characteristics of the cells.