N-CDS-P-SI HETEROJUNCTION SOLAR-CELLS

被引：26

作者：

COLUZZA, C ^{[1
]}

GAROZZO, M ^{[1
]}

MALETTA, G ^{[1
]}

MARGADONNA, D ^{[1
]}

TOMACIELLO, R ^{[1
]}

MIGLIORATO, P ^{[1
]}

机构：

[1] UNIV ROME,IST FIS,I-00100 ROME,ITALY

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：569 / 572

页数：4

共 11 条

[1] ELECTRONIC CHARACTERIZATION OF INDIUM TIN OXIDE-SILICON PHOTO-DIODES [J].

CHANG, NS ;

SITES, JR .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4833-4837

[2] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J].

DUBOW, JB ;

BURK, DE ;

SITES, JR .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :494-496

[3] ANGLE-OF-INCIDENCE EFFECTS IN ELECTRON-BEAM-DEPOSITED SNO2-SI SOLAR-CELLS [J].

FENG, T ;

GHOSH, AK ;

FISHMAN, C .

APPLIED PHYSICS LETTERS, 1979, 34 (03) :198-199

[4] EFFICIENT ELECTRON-BEAM-DEPOSITED ITO-N-SI SOLAR-CELLS [J].

FENG, T ;

GHOSH, AK ;

FISHMAN, C .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4972-4974

[5] SPRAY-DEPOSITED HIGH-EFFICIENCY SNO2LN-SI SOLAR-CELLS [J].

FENG, T ;

GHOSH, AK ;

FISHMAN, C .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :266-268

[6] HETEROJUNCTION SOLAR-CELLS OF SNO 2/SI [J].

FRANZ, S ;

KENT, G ;

ANDERSON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) :107-123

[7] SI-CDS HETEROJUNCTION SOLAR-CELLS [J].

LIVINGSTONE, FM ;

TSANG, WM ;

BARLOW, AJ ;

DELARUE, RM ;

DUNCAN, W .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) :1959-1963

[8] EFFICIENT SPRAYED IN2O3-SN N-TYPE SILICON HETEROJUNCTION SOLAR-CELL [J].

MANIFACIER, JC ;

SZEPESSY, L .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :459-462

[9] ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF CDS-SI JUNCTIONS [J].

OKIMURA, H ;

KONDO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (03) :274-&

[10] PHOTOVALTAIC PROPERTIES OF CDS-P.SI HETEROJUNCTION CELLS [J].

OKIMURA, H ;

KAWAKAMI, M ;

SAKAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (07) :908-&

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