PASSIVATION OF COPPER BY SILICIDE FORMATION IN DILUTE SILANE

被引：60

作者：

HYMES, S ^{[1
]}

MURARKA, SP ^{[1
]}

SHEPARD, C ^{[1
]}

LANFORD, WA ^{[1
]}

机构：

[1] SUNY ALBANY,ALBANY,NY 12222

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of copper silicide by reaction of silane with sputtered copper films has been observed at temperatures as low as 300-degrees-C. The growth kinetics have been monitored by both sheet resistance and x-ray diffraction techniques. Cu5Si is the first phase to form followed next by Cu3Si, coincident with the loss of the original copper layer. The silicide layer provides significant oxidation protection for the underlying copper up to 550-degrees-C in air.

引用

页码：4623 / 4625

页数：3

共 9 条

[1] CABRERA AL, 1990, J MATER RES, V6, P71
[2] REACTIVITY OF INTERMETALLIC THIN-FILMS FORMED BY THE SURFACE MEDIATED DECOMPOSITION OF MAIN GROUP ORGANOMETALLIC COMPOUNDS
DUBOIS, LH
NUZZO, RG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 441 - 445
[3] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES
MURARKA, SP
READ, MH
DOHERTY, CJ
FRASER, DB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301
[4] MURARKA SP, 1983, SILICIDES VLSI APPLI, pCH5
[5] AN XPS STUDY OF THE REACTION OF SILANE WITH OXIDIZED COPPER, SILVER, AND GOLD SURFACES
NUZZO, RG
DUBOIS, LH
[J]. SURFACE SCIENCE, 1985, 149 (01) : 119 - 132
[6] OHMI T, 1988, 5TH P INT C IEEE VMI
[7] OHMI T, IEEE88CH26245 CAT, P135
[8] STOLT L, UNPUB
[9] Wehrmann R., 1967, HIGH TEMPERATURE MAT, P399

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