PROPERTIES OF SILICON FILMS PRODUCED BY FIELD-EMISSION DEPOSITION

[1] ANSTON DH, 1979, ENG DIG LONDON, V40, P41

[2] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230

[3] CARLSON DE, 1977, RCA REV, V38, P211

[4] SILICON FILMS ON FOREIGN SUBSTRATES FOR SOLAR-CELLS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 45 - 60

[5] CLAMPITT R, 1977, 1977 P INT C ION PLA

[6] CLAMPITT R, 1978, 3RD P INT C RAP QUEN, P57

[7] FARROW RFC, 1979, THIN SOLID FILMS, V58, P189, DOI 10.1016/0040-6090(79)90235-9

[8] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[9] KAPLAN RA, 1980, ELECTRONICS, V53, P137

[10] MOTT NF, 1971, ELECTRONIC PROCESSES

[1] ANSTON DH, 1979, ENG DIG LONDON, V40, P41

[2] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230

[3] CARLSON DE, 1977, RCA REV, V38, P211

[4] SILICON FILMS ON FOREIGN SUBSTRATES FOR SOLAR-CELLS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 45 - 60

[5] CLAMPITT R, 1977, 1977 P INT C ION PLA

[6] CLAMPITT R, 1978, 3RD P INT C RAP QUEN, P57

[7] FARROW RFC, 1979, THIN SOLID FILMS, V58, P189, DOI 10.1016/0040-6090(79)90235-9

[8] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[9] KAPLAN RA, 1980, ELECTRONICS, V53, P137

[10] MOTT NF, 1971, ELECTRONIC PROCESSES