HOT-ELECTRON CAPTURE IN GAAS MQW - NDR AND PERSISTENT EFFECTS

被引:10
作者
BALKAN, N [1 ]
RIDLEY, BK [1 ]
ROBERTS, J [1 ]
机构
[1] UNIV SHEFFIELD,DEPT ELECTR,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
关键词
D O I
10.1016/0038-1101(88)90392-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:799 / 803
页数:5
相关论文
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