THE STUDY OF SUB-SURFACE AND INTERFACE CHARACTERISTICS OF SEMICONDUCTOR HETEROSTRUCTURES BY SLOW POSITRON IMPLANTATION SPECTROSCOPY

被引：10

作者：

BAKER, JA

COLEMAN, PG

机构：

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1989年 / 1卷

关键词：

D O I：

10.1088/0953-8984/1/SB/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：SB39 / SB44

页数：6

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