CARRIER CAPTURE IN INTERMIXED QUANTUM WIRES WITH SHARP LATERAL CONFINEMENT

被引：53

作者：

LEIER, H ^{[1
]}

FORCHEL, A ^{[1
]}

MAILE, BE ^{[1
]}

MAYER, G ^{[1
]}

HOMMEL, J ^{[1
]}

WEIMANN, G ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] FTZ,DEUTSCH BUNDESPOST,FORSCHUNGSINST,W-6100 DARMSTADT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated GaAs/GaAlAs quantum wires with widths between 220 and 40 nm by high-dose (2×1014 cm-2) Ga implantation in a locally masked single quantum well structure. The width dependence of the emission energies indicates a steep 1D confinement determined by the lateral straggling of the implanted Ga. The external quantum efficiency of the wires increases strongly with decreasing mask width due to significant carrier capture from the lateral barrier.

引用

页码：48 / 50

页数：3

共 10 条

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