INFRARED SURFACE-PLASMONS ON PLATINUM SILICIDE

被引：7

作者：

SELLAI, A ^{[1
]}

DAWSON, P ^{[1
]}

HENDREN, WR ^{[1
]}

MAGILL, SHS ^{[1
]}

GAMBLE, HS ^{[1
]}

机构：

[1] QUEENS UNIV BELFAST,DEPT ELECTR & ELECT ENGN,BELFAST BT7 1NN,ANTRIM,NORTH IRELAND

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

SURFACE PHENOMENA; INFRARED DETECTORS; SCHOTTKY BARRIERS;

D O I：

10.1049/el:19920102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that surface plasmons (SPs) are supported on thin PtSi films. Using a prism-air gap-sample configuration, p-polarised infra-red light (3.39-mu-m) has been coupled with approximately 95% efficiency to SPs on the silicide electrode of PtSi-Si Schottky barrier structures. Stimulating SPs offers both a means of optically characterising silicide films and of enhancing optical absorption with a view to significantly increasing the Schottky barrier photoresponse.

引用

页码：164 / 165

页数：2

共 9 条

[1] IMPROVED SURFACE-PLASMON ENHANCED PHOTODETECTION AT AN AU-GAAS SCHOTTKY JUNCTION USING A NOVEL MOLECULAR-BEAM EPITAXY GROWN OTTO COUPLING STRUCTURE [J].