EMPTY STATE AND FILLED STATE IMAGE OF ZNGA ACCEPTOR IN GAAS STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：52

作者：

ZHENG, ZF ^{[1
]}

SALMERON, MB ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn(Ga) acceptor atoms in the first to sixth layer below the GaAs (110) cleavage plane have been identified. For the first time, we find that the empty state scanning tunneling microscopy image of a Zn(Ga) acceptor is a characteristic equal latitude triangle-shaped feature of approximately 4 nm width with a (110) mirror plane. The filled state image, however, is a spherical feature of similar size. These unique features can be used as the signature for the identification Of Zn(Ga) in GaAs.

引用

页码：1836 / 1838

页数：3

共 6 条

[1] TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS [J].