TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS

被引：13

作者：

ALBREKTSEN, O

MEIER, HP

ARENT, DJ

SALEMINK, HWM

机构：

[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND

[2] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth terraces in molecular beam epitaxy-grown AlxGa1-xAs multilayers are observed on the ultrahigh vacuum cleaved (110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2-degrees off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.

引用

页码：2105 / 2107

页数：3

共 15 条

[1] SECONDARY ION MASS-SPECTROMETRY STUDY OF OXYGEN ACCUMULATION AT GAAS ALGAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
ACHTNICH, T
BURRI, G
PY, MA
ILEGEMS, M
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1730 - 1732
[2] STUDY OF OXYGEN INCORPORATION IN ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
ACHTNICH, T
BURRI, G
ILEGEMS, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04): : 2537 - 2541
[3] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES
ALBREKTSEN, O
ARENT, DJ
MEIER, HP
SALEMINK, HWM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (01) : 31 - 33
[4] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES
BIMBERG, D
CHRISTEN, J
FUKUNAGA, T
NAKASHIMA, H
MARS, DE
MILLER, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1191 - 1197
[5] III-V HETEROSTRUCTURE INTERFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
COLEMAN, JJ
COSTRINI, G
JENG, SJ
WAYMAN, CM
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 428 - 431
[6] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
TERSOFF, J
FEIN, AP
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
[7] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF GROWTH INTERRUPTION EFFECT ON ALAS/GAAS INTERFACIAL STRUCTURE DURING MOLECULAR-BEAM EPITAXY
IKARASHI, N
TANAKA, M
SAKAKI, H
ISHIDA, K
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1360 - 1362
[8] DETERMINATION OF THE ATOMIC CONFIGURATION AT SEMICONDUCTOR INTERFACES
OURMAZD, A
TSANG, WT
RENTSCHLER, JA
TAYLOR, DW
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1417 - 1419
[9] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION
OURMAZD, A
TAYLOR, DW
CUNNINGHAM, J
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (08) : 933 - 936
[10] TUNNELING MICROSCOPY AND SPECTROSCOPY ON CROSS-SECTIONS OF MOLECULAR-BEAM-EPITAXY-GROWN (AI)GAAS MULTILAYERS
SALEMINK, H
ALBREKTSEN, O
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 779 - 782

← 1 2 →