III-V HETEROSTRUCTURE INTERFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

The interface characteristics of five different heterostructures grown by metalorganic chemical vapor deposition (MOCVD) have been studied using secondary ion mass spectroscopy (SIMS) and high-resolution transmission electron microscopy (TEM). Two all-binary AlAs-GaAs superlattices, ternary Al//0//. //6Ga//0//. //4As-GaAs and GaAs//0//. //9//5P//0//. //0//5-GaAs superlattices and a mismatched GaAs//0//. //8P//0//. //2-GaAs single interface have been examined for compositional transients and interface abruptness. When an interrupted growth process (15 s pause between layers) is used in an atmospheric pressure MOCVD reactor system, no evidence of compositional transients is observed in analysis of SIMS data interfaces of heterostructures grown in this manner and examined with high-resolution TEM and corresponding lattice imaging are found to be abrupt within a single atomic layer.