INTERFACE CHARACTERISTICS OF GAAS/ALXGA1-XAS SUPERLATTICES GROWN BY MOCVD

被引：11

作者：

JENG, SJ

WAYMAN, CM

COLEMAN, JJ

COSTRINI, G

机构：

[1] UNIV ILLINOIS,DEPT MET & MIN ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1016/0167-577X(85)90005-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：89 / 92

页数：4

共 16 条

[1] THE GROWTH AND CHARACTERIZATION OF METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD) QUANTUM WELL TRANSPORT STRUCTURES
COLEMAN, JJ
DAPKUS, PD
THOMPSON, DE
CLARKE, DR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 207 - 212
[2] COSTRINI G, UNPUB
[3] METALORGANIC CHEMICAL VAPOR-DEPOSITION
DAPKUS, PD
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269
[4] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
DRUMMOND, TJ
KLEM, J
ARNOLD, D
FISCHER, R
THORNE, RE
LYONS, WG
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[5] IMPROVEMENT OF THE INVERTED GAAS/ALGAAS HETEROINTERFACE
FISCHER, R
MASSELINK, WT
SUN, YL
DRUMMOND, TJ
CHANG, YC
KLEIN, MV
MORKOV, H
ANDERSON, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 170 - 174
[6] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[7] Jeng S. J., 1984, Materials Letters, V2, P359, DOI 10.1016/0167-577X(84)90111-3
[8] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES
MILLER, RC
TSANG, WT
MUNTEANU, O
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 374 - 376
[9] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
FISCHER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1030 - 1033
[10] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
PETROFF, PM
MILLER, RC
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219

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