THEORY OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS WITH OVERLAPPING ELECTRONIC ORBITALS

被引：16

作者：

MAJLIS, N ^{[1
]}

ANDA, E ^{[1
]}

机构：

[1] UNIV FED FLUMINENSE,DEPT FIS,MORRO DE SAO JOAO BATISTA,RJ,BRAZIL

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 08期

关键词：

D O I：

10.1088/0022-3719/11/8/021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1607 / 1617

页数：11

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[2] MONTE CARLO CALCULATIONS OF IMPURITY BAND STATES IN A DEGENERATE SEMICONDUCTOR
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (569P): : 811 - &
[3] THEORY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS - AN APPROACH TO RANDOM LATTICE PROBLEM
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[4] EFFECTIVE-MEDIUM APPROXIMATION FOR LIQUID-METALS
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[J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2476 - 2484
[5] EFFECT OF NONORTHOGONALITY IN DENSITY OF STATES OF SOME METALLIC DISORDERED SYSTEMS
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[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1977, 7 (06): : 913 - 919
[6] EFFECT OF NON-ORTHOGONALITY AND PREVIOUSLY NEGLECTED DIAGONAL TERMS IN TIGHT-BINDING APPROXIMATION FOR ELECTRONIC-STRUCTURE OF LIQUID-METALS AND ALLOYS
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[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1976, 6 (06): : 1091 - 1101