MONTE CARLO CALCULATIONS OF IMPURITY BAND STATES IN A DEGENERATE SEMICONDUCTOR

被引:14
作者
MAJLIS, N
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1967年 / 90卷 / 569P期
关键词
D O I
10.1088/0370-1328/90/3/326
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:811 / &
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[1]   IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].
FRITZSCHE, H ;
CUEVAS, M .
PHYSICAL REVIEW, 1960, 119 (04) :1238-1245
[2]   BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J].
JAMES, HM ;
GINZBARG, AS .
JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :840-848
[3]   A THEORY OF IMPURITY CONDUCTION .2. [J].
KASUYA, T ;
KOIDE, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) :1287-1297
[4]   THEORY OF ACCEPTOR LEVELS IN GERMANIUM [J].
KOHN, W ;
SCHECHTER, D .
PHYSICAL REVIEW, 1955, 99 (06) :1903-1904
[5]   ONE-DIMENSIONAL IMPURITY BANDS [J].
LAX, M ;
PHILLIPS, JC .
PHYSICAL REVIEW, 1958, 110 (01) :41-49
[6]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883
[7]   THEORY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS - AN APPROACH TO RANDOM LATTICE PROBLEM [J].
MATSUBARA, T ;
TOYOZAWA, Y .
PROGRESS OF THEORETICAL PHYSICS, 1961, 26 (05) :739-756
[8]   IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].
MILLER, A ;
ABRAHAMS, E .
PHYSICAL REVIEW, 1960, 120 (03) :745-755