ENERGY BAND STRUCTURE OF STRAINED CRYSTALS - PSEUDOPOTENTIAL CALCULATIONS FOR GE AND SI WITH TRIAL CALCULATIONS FOR GAAS AND CDTE

被引：28

作者：

MELZ, PJ

机构：

来源：

关键词：

D O I：

10.1016/S0022-3697(71)80023-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：209 / &

共 36 条

[1] SCREENED MODEL POTENTIAL FOR 25 ELEMENTS
ANIMALU, AOE
HEINE, V
[J]. PHILOSOPHICAL MAGAZINE, 1965, 12 (120): : 1249 - &
[2] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
BALSLEV, I
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
[3] EFFECT OF ALLOYING AND PRESSURE ON BAND STRUCTURE OF GERMANIUM AND SILICON
BASSANI, F
BRUST, D
[J]. PHYSICAL REVIEW, 1963, 131 (04): : 1524 - &
[4] REFLECTANCE MODULATION AT A GERMANIUM SURFACE
BATZ, B
[J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 241 - &
[5] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85
[6] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON
BRUST, D
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &
[7] FORM FACTORS AND ULTRAVIOLET SPECTRA OF SEMICONDUCTORS AT HIGH PRESSURE
BRUST, D
LIU, L
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 647 - &
[8] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &
[9] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[10] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +