LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CUALSE2 EPITAXIAL-FILMS

被引：7

作者：

CHICHIBU, S

SHIRAKATA, S

SUDO, R

UCHIDA, M

HARADA, Y

MATSUMOTO, S

HIGUCHI, H

ISOMURA, S

机构：

[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN

[2] BENTEC CORP,TACHIKAWA,TOKYO 190,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

LP-MOCVD; CUALSE(2); EXCITON LUMINESCENCE; TRIISOBUTYLALUMINUM; CHALCOPYRITE COMPOUNDS;

D O I：

10.7567/JJAPS.32S3.139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both of which have lower decomposition temperatures.

引用

页码：139 / 141

页数：3

共 9 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].