NONLINEAR ELECTRICAL-TRANSPORT IN POROUS SILICON

被引：195

作者：

BENCHORIN, M

MOLLER, F

KOCH, F

机构：

[1] Technische Universität München, Physik-Department E16

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.49.2981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study of the electrical transport in porous Si layers prepared by anodic etching of two different kinds of (100) p-type Si substrates. It is shown that by choosing a sufficiently thick layer, the problem of injection from the contacts can be eliminated. In this way we measure the intrinsic transport properties. The results suggest that a Poole-Frenkel type of mechanism accounts for the observed electric-field-enhanced conduction.

引用

页码：2981 / 2984

页数：4

共 17 条

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