THE ROLE OF DISSOLVED-OXYGEN IN HOT-WATER DURING DISSOLVING OXIDES AND TERMINATING SILICON SURFACES WITH HYDROGEN

被引:45
作者
WATANABE, S
SUGITA, Y
机构
[1] Fujitsu Laboratories Ltd., Atsugi, 243-01
关键词
AMORPHOUS SURFACES; HYDROGEN; INFRARED ABSORPTION SPECTROSCOPY; OXIDATION; OXYGEN; SILICON; SILICON OXIDES; SINGLE CRYSTAL SURFACES; SURFACE CHEMICAL REACTION; VIBRATIONS OF ADSORBED MOLECULES; WATER;
D O I
10.1016/0039-6028(94)00805-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Evidence of the removal of surface oxides from a partially oxidized Si(111) surface, and the simultaneous termination of the new dangling bonds by hydrogen in hot water, has been obtained. The amount of remaining oxides decreased by lowering the dissolved-oxygen concentration (DOG) from 4 to 0.004 ppm. After immersing in hot water with a DOC of 0.004 ppm for 60 min, almost all of the surface was hydrogen-terminated and only a tiny amount of silanol groups remained. The appearance of vertical dihydrides at step edges showed that the oxidation process on the hydrogen-terminated surface continues, even in water with a DOC of 0.004 ppm.
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页码:1 / 8
页数:8
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