STUDIES ON HETEROEPITAXIAL DEPOSITION OF GAP FROM TIN MELTS ONTO GAAS SUBSTRATES

[1] HETEROEPITAXIAL GROWTH OF GAP ON SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 147 - 157

[2] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153

[3] GROWTH OF GAP LAYERS FROM THIN ALIQUOT MELTS - LIQUID-PHASE EPITAXY AS A COMMERCIAL PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1558 - 1563

[4] CROSSLEY I, 1973, J CRYST GROWTH, V19, P168

[5] EFFECT OF SUBSTRATE PREPARATION ON SMOOTHNESS OF LIQUID-PHASE EPITAXIAL (ALGA)AS ON GAP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (03) : 233 - 236

[6] GOTTSCHALCH V, J CRYST GROWTH

[7] GUHA S, 1975, ELECTRON LETT, V11

[8] HSIEH JJ, 1974, J CRYST GROWTH, V27

[9] Leonhardt A., 1974, Kristall und Technik, V9, P77, DOI 10.1002/crat.19740090113

[10] THIN SOLUTION MULTIPLE LAYER EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) : 81 - +

[1] HETEROEPITAXIAL GROWTH OF GAP ON SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 147 - 157

[2] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153

[3] GROWTH OF GAP LAYERS FROM THIN ALIQUOT MELTS - LIQUID-PHASE EPITAXY AS A COMMERCIAL PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1558 - 1563

[4] CROSSLEY I, 1973, J CRYST GROWTH, V19, P168

[5] EFFECT OF SUBSTRATE PREPARATION ON SMOOTHNESS OF LIQUID-PHASE EPITAXIAL (ALGA)AS ON GAP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (03) : 233 - 236

[6] GOTTSCHALCH V, J CRYST GROWTH

[7] GUHA S, 1975, ELECTRON LETT, V11

[8] HSIEH JJ, 1974, J CRYST GROWTH, V27

[9] Leonhardt A., 1974, Kristall und Technik, V9, P77, DOI 10.1002/crat.19740090113

[10] THIN SOLUTION MULTIPLE LAYER EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) : 81 - +