HYDROGEN PASSIVATION OF BORON ACCEPTORS IN SILICON - RAMAN STUDIES

被引：60

作者：

STUTZMANN, M

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.35.5921

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5921 / 5924

页数：4

共 24 条

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