INFRARED-ABSORPTION AND RAMAN-SPECTRA OF LI-COMPENSATED B-DOPED SI

被引：23

作者：

CARDONA, M

SHEN, SC

VARMA, SP

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.23.5329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5329 / 5334

页数：6

共 16 条

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ANGRESS, JF
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SMITH, SD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408): : 64 - &
[3] [Anonymous], ELECTRONIC STRUCTURE
[4] INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (04) : 671 - +
[5] STRESS DEPENDENCE OF RAMAN FREQUENCIES AND ELASTIC-CONSTANTS OF CUBIC SEMICONDUCTORS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 53 (02): : 675 - &
[6] RAMAN STUDY OF INTERACTION BETWEEN LOCALIZED VIBRATIONS AND ELECTRONIC EXCITATIONS IN BORON-DOPED SILICON
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CARDONA, M
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4344 - 4350
[7] STUDY OF THE LOCALIZED VIBRATIONS OF BORON IN HEAVILY DOPED SI
CHANDRASEKHAR, M
CHANDRASEKHAR, HR
GRIMSDITCH, M
CARDONA, M
[J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4825 - 4833
[8] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON
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ELLIOTT, RJ
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &
[9] EFFECT OF UNIAXIAL STRESS ON ZONE-CENTER OPTICAL PHONON OF DIAMOND
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ANASTASSAKIS, E
CARDONA, M
[J]. PHYSICAL REVIEW B, 1978, 18 (02): : 901 - 904
[10] MATTAUSCH HJ, UNPUBLISHED

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