RAMAN STUDY OF INTERACTION BETWEEN LOCALIZED VIBRATIONS AND ELECTRONIC EXCITATIONS IN BORON-DOPED SILICON

被引：65

作者：

CERDEIRA, F ^{[1
]}

FJELDLY, TA ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,WEST GERMANY

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4344

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4344 / 4350

页数：7

共 23 条

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[7] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES
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[J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4734 - 4745
[8] EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE
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[J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1440 - &
[9] RESONANT RAMAN SCATTERING IN GERMANIUM
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[10] THEORY OF THE LATTICE VIBRATIONS OF GERMANIUM
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