SELF BIASED HETEROJUNCTION EFFECT OF FERROELECTRIC THIN-FILM ON SILICON

被引：10

作者：

XU, YH

CHEN, CJ

XU, R

MACKENZIE, JD

机构：

[1] Materials Science and Enginetring Department University of California

来源：

FERROELECTRICS | 1990年 / 108卷

关键词：

D O I：

10.1080/00150199008018731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several femlecaic thin films with n-type or p-type conductivity. including undoped and doped PZT (Lead-Zirconate Titanate). BaTiO3 (Barium Titanate). SBN (Strontium-Barium Niobate), KNb4 (Potassium Niobate) as well as PBN (Lead Barium Niobate) were made on the silicon substrates by the sol-gel process Self biased heterojunction effects were observed. It has been observed that either p-n junction or n-p junction in the f ∼ ∼ e s a n i c o n d u c tsoysrt em behave lie a rcctiFying diode. A physical explaination has been const∼ctcdin exphiniig this effect. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：47 / 52

页数：6

共 12 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].