共 24 条
- [1] OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 756 - 762
- [2] BETTI MG, COMMUNICATION
- [3] HIGH-RESOLUTION ELECTRON ENERGY-LOSS STUDIES OF SPACE-CHARGE LAYERS ON DOPED GAAS(110) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (03): : 686 - 688
- [4] ELECTRON-ENERGY-LOSS STUDY OF THE SPACE-CHARGE REGION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9128 - 9134
- [5] UNIVERSALITY ASPECTS OF METAL-NONMETAL TRANSITION IN CONDENSED MEDIA [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2575 - 2581
- [6] EGRI I, 1983, SURF SCI, V128, P51, DOI 10.1016/0039-6028(83)90380-1
- [7] SURFACE-PLASMONS ON N-TYPE SEMICONDUCTORS - INFLUENCE OF DEPLETION AND ACCUMULATION LAYERS [J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1051 - 1067
- [8] SELF-CONSISTENT CALCULATIONS OF DEPLETION-LAYER AND ACCUMULATION-LAYER PROFILES IN NORMAL-TYPE GAAS [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 3939 - 3947
- [9] Fetter A L, 1971, QUANTUM THEORY MANY