256-KBIT BUBBLE MEMORY CHIP FABRICATION AND CHARACTERIZATION

被引:9
作者
TSUZUKI, N
YAMAMOTO, M
HYUGA, F
机构
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo
关键词
D O I
10.1063/1.327060
中图分类号
O59 [应用物理学];
学科分类号
摘要
A 256 kbit bubble memory chip, which uses asymmetric chevron propagation elements has been designed, fabricated and characterized. Average circuit period is 8 μm and minimum feature size is 1 μm for all chip functions. Chip size is 4.5 mm×5.1 mm. A new stretcher detector and a planar chip structure enable the 256 kbit chip to operate at low rotating field. For a typical device processed on a (YSmLu)3(FeGa)5O 12 magnetic garnet film, the overall bias margin for all functions is 15 Oe with a 50 Oe circular rotating field at 200 kHz.
引用
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页码:2219 / 2221
页数:3
相关论文
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