Laser ablation-deposited PZT thin films for piezoelectric microsensors and microactuators

被引：10

作者：

Nickles, AS

Ramesh, R

White, RM

Haller, EE

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY SENSOR & ACTUATOR CTR,BERKELEY,CA 94720

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

INTEGRATED FERROELECTRICS | 1995年 / 10卷 / 1-4期

关键词：

D O I：

10.1080/10584589508012267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on growth and deposition process optimization of laser ablation-deposited Pb(Zr0.53Ti0.47)O-3 thin films for application in piezoelectric microdevices. Films were grown on three different substrates: (100) cut LaAlO3 single crystals, Pt/Ti/SiO2/Si, and Pt/Ti/Si3+xN4/Si. On all three substrates, a deposition temperature of 620 degrees C yielded perovskite films with good ferroelectric hysteresis properties. La0.5Sr0.5CoO3 bottom and top electrodes were used for all films. PZT films on Pt/Ti/SiO2/Si showed a variation of texture with film thickness. Thin membranes of PZT on Si3+xN4 were also fabricated.

引用

页码：89 / 98

页数：10

共 5 条

[1] MICROTRANSPORT INDUCED BY ULTRASONIC LAMB WAVES [J].