STUDIES OF BULK AND SURFACE-STATES OF CUBIC II-VI SEMICONDUCTORS USING SYNCHROTRON RADIATION

被引：11

作者：

BACHRACH, RZ ^{[1
]}

BAUER, RS ^{[1
]}

FLODSTROM, SA ^{[1
]}

MCMENAMIN, JC ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1007/BF02725813

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：704 / 708

页数：5

共 10 条

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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 378 - 382
[2] BAUER RS, 1976, B AM PHYS SOC, V21, P936
[3] BROWN FC, 1975, VACUUM ULTRAVIOLET R, P785
[4] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS
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[5] LEED INTENSITY ANALYSIS AND ELECTRON-SPECTROSCOPY OF ZNSE (110)
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[7] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 757 - 760
[8] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY
LEY, L
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KOWALCZY.SP
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[J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621
[9] MEASUREMENT OF ANGLE OF DANGLING-BOND PHOTOEMISSION FROM CLEAVED SILICON
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SMITH, NV
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (22) : 1333 - 1335
[10] WINICK H, 1975, VACUUM ULTRAVIOLET R, P776