LOW-VOLTAGE-DRIVEN ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES USING INSULATING DIELECTRIC CERAMIC SHEETS

被引：2

作者：

NANTO, H

MINAMI, T

MURAKAMI, S

TAKATA, S

机构：

[1] Kanazawa Inst of Technology, Japan

来源：

THIN SOLID FILMS | 1988年 / 164卷

关键词：

Ceramic Materials - Dielectric Devices--Thin Films - Semiconducting Zinc Compounds;

D O I：

10.1016/0040-6090(88)90163-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A ZnS:M ac thin film electroluminescent (EL) device with a metal-insulator-semiconductor structure has been fabricated by using BaTiO3 ceramic sheet as an insulating layer. It is found that the EL characteristics depend on the dielectric constant and loss of the insulating ceramic sheets and on the crystallinity of the ZnS:Mn emitting layer. A maximum luminance of 6300 cd m-2 and luminous efficiency of 11 lm WMIN1 are attained for the EL devices with an emitting layer deposited by a metal organic chemical vapor deposition techniques.

引用

页码：363 / 367

页数：5

共 6 条

[1] MINAMI T, 1986, 6TH P INT DISPL RES, P140
[2] Nire T., 1987, 1987 SID International Symposium. Digest of Technical Papers. First Edition, P243
[3] SANO Y, 1985, 1985 P INT DISPL RES, P173
[4] Suntola T., 1980, 1980 SID INT S SAN D, P108
[5] HIGH-QUALITY ZINC-SULFIDE THIN-FILMS GROWN BY MOCVD USING CARBON-DISULFIDE AS A SULFUR SOURCE
TAKATA, S
MINAMI, T
MIYATA, T
NANTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02): : L247 - L250
[6] GROWTH OF HEXAGONAL ZNS THIN-FILMS BY MOCVD USING CS2 GAS AS A SULFUR SOURCE
TAKATA, S
MINAMI, T
MIYATA, T
NANTO, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 257 - 262

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