HIGH-QUALITY ZINC-SULFIDE THIN-FILMS GROWN BY MOCVD USING CARBON-DISULFIDE AS A SULFUR SOURCE

被引：14

作者：

TAKATA, S ^{[1
]}

MINAMI, T ^{[1
]}

MIYATA, T ^{[1
]}

NANTO, H ^{[1
]}

机构：

[1] KANAZAWA INST TECHNOL,ELECTRON DEVICE SYST LAB,KANAZAWA S,ISHIKAWA 921,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期

关键词：

ELECTROLUMINESCENCE - FILMS - Chemical Vapor Deposition - MICROSCOPIC EXAMINATION;

D O I：

10.1143/JJAP.27.L247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality zinc sulfide (ZnS) films are prepared by a low-pressure metalorganic chemical vapor deposition technique using carbon disulfide (CS//2) as a new sulfur source material. In the diethylzinc-CS//2 system, the ZnS films are grown on the substrates at a temperature above about 200 degree C. The ZnS films with a strongly preferred orientation are grown on glass substrates at a temperature of 325-425 degree C and with an atomic ratio of supplied sulfur to zinc of 18-22.

引用

页码：L247 / L250

页数：4

共 17 条

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