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EFFECTS OF THICK OXIDES ON GERMANIUM SURFACE PROPERTIES

被引：27
作者：
LASSER, M
WYSOCKI, C
BERNSTEIN, B
机构：
来源：
PHYSICAL REVIEW | 1957年 / 105卷 / 02期
关键词：
D O I：
10.1103/PhysRev.105.491
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：491 / 494
页数：4
相关论文
共 7 条
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[2]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
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NEUSTADTER, SF .
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KINGSTON, RH .
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[4]   MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM AND SILICON BY EXTERNAL ELECTRIC FIELDS [J].
LOW, GGE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01) :10-16
[5]  
PRATT GW, UNPUBLISHED
[6]   EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].
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PHYSICAL REVIEW, 1955, 97 (03) :641-646
[7]   MODULATION OF CONDUCTANCE OF THIN FILMS OF SEMI-CONDUCTORS BY SURFACE CHARGES [J].
SHOCKLEY, W ;
PEARSON, GL .
PHYSICAL REVIEW, 1948, 74 (02) :232-233
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