EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .3. GOLD IN GERMANIUM

被引：26

作者：

HOLLAND, MG

PAUL, W

机构：

来源：

PHYSICAL REVIEW | 1962年 / 128卷 / 01期

关键词：

D O I：

10.1103/PhysRev.128.43

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：43 / &

共 22 条

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[8] EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .1. ARSENIC, INDIUM, AND ALUMINUM IN SILICON
HOLLAND, MG
PAUL, W
[J]. PHYSICAL REVIEW, 1962, 128 (01): : 30 - &
[9] HOLLAND MG, UNPUBLISHED
[10] KHARTSEV VE, 1958, SOV PHYS-TECH PHYS, V3, P1522