THE EFFECT OF CONCENTRATION ON THE MAGNETIC SUSCEPTIBILITY OF TRAPPED ELECTRONS AND HOLES IN SEMICONDUCTORS

被引：3

作者：

HEDGCOCK, FT

机构：

来源：

关键词：

D O I：

10.1139/p59-041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：381 / 383

页数：3

共 8 条

[1] GLASSTONE S, 1949, THEORETICAL CHEM, P79
[2] HEDGCOCK FT, 1957, J ELECTRONICS, V2, P513
[3] HEDGCOCK FT, 1955, THESIS U WESTERN ONT
[4] KOHN W, 1957, SOLID STATE PHYSICS, V5
[5] MAGNETIC SUSCEPTIBILITY OF IMPURITY-TRAPPED ELECTRONS AND HOLES IN SEMICONDUCTORS
MOOSER, E
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1589 - 1592
[6] MOTT NF, 1940, ELECTRONIC PROCESSES, pCH3
[7] STATISTICAL THEORY OF PROPERTIES OF SOLID SOLUTIONS
SMOLUCHOWSKI, R
[J]. PHYSICAL REVIEW, 1951, 84 (03): : 511 - 518
[8] SONDER E, UNPUBLISHED