MAGNETIC SUSCEPTIBILITY OF IMPURITY-TRAPPED ELECTRONS AND HOLES IN SEMICONDUCTORS

被引：19

作者：

MOOSER, E

机构：

来源：

PHYSICAL REVIEW | 1955年 / 100卷 / 06期

关键词：

D O I：

10.1103/PhysRev.100.1589

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1589 / 1592

页数：4

共 16 条

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[3]

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[4]

BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[5]

BUSCH G, 1951, Z PHYS CHEM, V198, P23

[6]

Castellan G. W., 1951, SEMICONDUCTING MATER, P8

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ERGINSOY, C .

PHYSICAL REVIEW, 1952, 88 (04) :893-894

[8] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J].

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PHYSICAL REVIEW, 1950, 80 (06) :1104-1105

FRITZSCHE, H ;

LARKHOROVITZ, K .

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[10] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].

HUNG, CS ;

GLIESSMAN, JR .

PHYSICAL REVIEW, 1954, 96 (05) :1226-1236