DESIGN OF HIGH-POWER STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS WITH A VERTICAL DIVERGENCE ANGLE OF 18-DEGREES

被引：44

作者：

TEMMYO, J

SUGO, M

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 08期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical-divergence emitting angle of 18 degrees. A maximum free-space optical output of >500mW and a singlemode-fibre coupled power of >250mW were obtained.

引用

页码：642 / 644

页数：3