ELECTRICAL AND METALLURGICAL CHARACTERIZATION OF NIOBIUM AS A DIFFUSION BARRIER BETWEEN ALUMINUM AND SILICON FOR INTEGRATED-CIRCUIT DEVICES

被引：4

作者：

FARAHANI, MM ^{[1
]}

TURNER, TE ^{[1
]}

BARNES, JJ ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,DEPT ADV TECHNOL,CARROLLTON,TX 75006

来源：

关键词：

D O I：

10.1149/1.2096947

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1484 / 1494

页数：11

共 21 条

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[7] EVANS UR, 1982, INTRO METALLI CORROS, P48
[8] EVALUATION OF TITANIUM AS A DIFFUSION BARRIER BETWEEN ALUMINUM AND SILICON FOR 1.2 MU-M CMOS INTEGRATED-CIRCUITS
FARAHANI, MM
TURNER, TE
BARNES, JJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) : 2835 - 2845
[9] Fischer F., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P190, DOI 10.1109/IRPS.1984.362043
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