EVALUATION OF TITANIUM AS A DIFFUSION BARRIER BETWEEN ALUMINUM AND SILICON FOR 1.2 MU-M CMOS INTEGRATED-CIRCUITS

被引：9

作者：

FARAHANI, MM

TURNER, TE

BARNES, JJ

机构：

[1] Thomson Components-Mostek Corp,, Carrollton, TX, USA, Thomson Components-Mostek Corp, Carrollton, TX, USA

来源：

关键词：

D O I：

10.1149/1.2100298

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2835 / 2845

页数：11

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